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| New Product MBR40H35CT thru MBR40H60CT Vishay General Semiconductor Dual Common-Cathode Schottky Rectifiers High Barrier Technology for Improved High Temperature Performance FEATURES TO-220AB * Guardring for overvoltage protection * Low power losses, high efficiency * Low forward voltage drop * Low leakage current * High forward surge capability * High frequency operation * Solder dip 260 C, 40 s * Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICATIONS For use in low voltage, high frequency rectifier of switching mode power supplies, freewheeling diodes, dc-to-dc converters or polarity protection application. MECHANICAL DATA Case: TO-220AB Epoxy meets UL 94V-0 flammability rating Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102 E3 suffix for consumer grade, meets JESD 201 class 1A whisker test Mounting Torque: 10 in-lbs maximum Polarity: As marked 1 PIN 1 PIN 3 2 3 PIN 2 CASE PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 20 A IR TJ max. 20 A x 2 35 V to 60 V 350 A, 320 A 0.55 V, 0.60 V 100 A 175 C MAXIMUM RATINGS (TC = 25 C unless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage Maximum average forward rectified current (Fig. 1) total device per diode SYMBOL VRRM IF(AV) MBR40H35CT 35 MBR40H45CT 45 40 20 350 320 MBR40H50CT 50 MBR40H60CT 60 UNIT V A Peak forward surge current 8.3 ms single half sine-wave superimposed on per diode rated load Peak repetitive reverse current per diode at tp = 2 s, 1 kHz Peak non-repetitive reverse surge energy (8/20 s waveform) Non-repetitive avalanche energy at 25 C, IAS = 3.0 A, L = 5 mH Voltage rate of change (rated VR) Operating junction and storage temperature range per diode per diode IFSM A IRRM ERSM EAS dV/dt TJ, TSTG 1.0 20 22.5 10 000 - 65 to + 175 A mJ mJ V/s C Document Number: 88920 Revision: 19-May-08 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com www.vishay.com 1 New Product MBR40H35CT thru MBR40H60CT Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TC = 25 C unless otherwise noted) PARAMETER Maximum instantaneous forward voltage per diode (1) Maximum instantaneous reverse current per diode (2) Typical junction capacitance TEST CONDITIONS IF = 20 A IF = 20 A IF = 40 A IF = 40 A rated VR TJ = 25 C TJ = 125 C TJ = 25 C TJ = 125 C TJ = 25 C TJ = 125 C SYMBOL MBR40H35CT MBR40H45CT MBR40H50CT MBR40H60CT UNIT 0.64 0.55 0.76 0.70 100 15 1200 920 0.68 0.60 0.83 0.73 VF V IR CJ A mA pF 4.0 V, 1 MHz per diode Notes: (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms THERMAL CHARACTERISTICS (TC = 25 C unless otherwise noted) PARAMETER Thermal resistance, junction to case per diode SYMBOL MBR40H35CT MBR40H45CT MBR40H50CT MBR40H60CT UNIT RJC 1.8 C/W ORDERING INFORMATION (Example) PACKAGE TO-220AB PREFERRED P/N MBR40H45CT-E3/45 UNIT WEIGHT (g) 1.58 PACKAGE CODE 45 BASE QUANTITY 50/tube DELIVERY MODE Tube RATINGS AND CHARACTERISTICS CURVES (TA = 25 C unless otherwise specified) 50 400 Peak Forward Surge Current (A) Average Forward Current (A) 350 300 250 200 150 100 50 0 MBR40H35CT - MBR40H45CT MBR40H50CT - MBR40H60CT 1 10 100 40 30 20 10 MBR40H35CT - MBR40H45CT MBR40H50CT - MBR40H60CT 0 25 50 75 100 125 150 175 200 Case Temperature (C) Number of Cycles at 60 Hz Figure 1. Forward Derating Curve Per Diode Figure 2. Maximum Non-Repetitive Peak Forward Surge Current Per Diode www.vishay.com 2 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com Document Number: 88920 Revision: 19-May-08 New Product MBR40H35CT thru MBR40H60CT Vishay General Semiconductor 100 10 000 MBR40H35CT - MBR40H45CT MBR40H50CT - MBR40H60CT TJ = 175 C Instantaneous Forward Current (A) 10 TJ = 125 C Junction Capacitance (pF) 1000 1 TJ = 25 C 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 MBR40H35CT - MBR40H45CT MBR40H50CT - MBR40H60CT 100 0.1 1 10 100 Instantaneous Forward Voltage (V) Reverse Voltage (V) Figure 3. Typical Instantaneous Forward Characteristics Per Diode Figure 5. Typical Junction Capacitance Per Diode 1 000 000 100 000 10 000 1000 100 10 TJ = 25 C 1 0.1 20 30 40 50 60 70 80 90 100 TJ = 175 C 10 TJ = 125 C Transient Thermal Impedance (C/W) Instantaneous Reverse Current (A) 1 MBR40H35CT - MBR40H45CT MBR40H50CT - MBR40H60CT MBR40H35CT - MBR40H45CT MBR40H50CT - MBR40H60CT 0.1 0.01 0.1 1 10 100 Percent of Rated Peak Reverse Voltage (%) t - Pulse Duration (s) Figure 4. Typical Reverse Characteristics Per Diode Figure 6. Typical Transient Thermal Impedance Per Diode PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-220AB 0.055 (1.40) 0.047 (1.20) 0.398 (10.10) 0.382 (9.70) 0.343 (8.70) TYP. 0.150 (3.80) 0.139 (3.54) DIA. 0.114 (2.90) 0.106 (2.70) 0.154 (3.90) 0.138 (3.50) 0.331 (8.40) TYP. 0.638 (16.20) 0.598 (15.20) 0.634 (16.10) 0.618 (15.70) 1.161 (29.48) 1.106 (28.08) 0.102 (2.60) 0.087 (2.20) 0.370 (9.40) 0.354 (9.00) 0.185 (4.70) 0.169 (4.30) 0.055 (1.40) 0.049 (1.25) 0.067 (1.70) TYP. PIN 123 0.118 (3.00) TYP. 0.523 (13.28) 0.507 (12.88) 0.035 (0.90) 0.028 (0.70) 0.100 (2.54) TYP. 0.064 (1.62) 0.056 (1.42) 0.200 (5.08) TYP. 0.024 (0.60) 0.018 (0.45) Document Number: 88920 Revision: 19-May-08 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com www.vishay.com 3 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1 |
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